| TK8P65W,RQ |
HXY MOSFET |
ID:10.2A, VDSS:800V, RDON:550m R, VGS:-8/+20V, TYPE:NChannel, |
28,588 pcs |
|
| GCMX005A120B3B1P |
SemiQ Inc |
927n C@ 20V 23.5n F@800V 1.154KW(Tc) 7mΩ@ 200A, 20V 1.2KV 4V@80m A Mount |
38,151 pcs |
|
| CMF10120D-VB |
VBsemi |
TO247;NChannel, 1200V, 30A, RDS(ON)=80mΩ@VGS=18V, VGS= -10/+22V, Vth=2~4V;Suitable for demanding power electronics applications requiring high efficiency, high power density and high reliability;such ase VTOL, low-altitude logistics drone charging stations, induction cookers, smart ovens, solar PV invertersandenergy storage convertersetc.. |
43,313 pcs |
|
| IPAW60R380CE-HXY |
HXY MOSFET |
ID:15A, VDSS:650V, RDON:260m R, VGS:-5~+16V, TYPE:NChannel, |
20,947 pcs |
|
| GC2M1000170D |
HXY MOSFET |
ID:5A, VDSS:1700V, RDON:800m R, VGS:22V, TYPE:NChannel, |
24,152 pcs |
|
| MSCSM170AM029CT6LIAG |
Microchip Technology Inc |
2.136μC@ 20V 39.6n F@1000V 3KW(Tc) 3.75mΩ@ 360A, 20V 1.7KV 3.3V@30m A 2NChannel Mount |
38,257 pcs |
|
| G3F60MT06J-VB |
VBsemi |
TO263;NChannel, 650V;35A;RDS(ON)=55mΩ@VGS=18V, VGS=-10/+20V;Vth=1.5~4.5V;Suitable for high efficiency, high power density and high reliability applications, Especially suitable for systems requiring high voltage, high frequency, high temperature stability. |
39,742 pcs |
|
| NTPF190N65S3HF-HXY |
HXY MOSFET |
ID:11A, VDSS:800V, RDON:165m R, VGS:-8/+20V, TYPE:NChannel, |
39,557 pcs |
|
| STW20N65M5-HXY |
HXY MOSFET |
ID:25A, VDSS:800V, RDON:165m R, VGS:-8/+20V, TYPE:NChannel, |
24,621 pcs |
|
| CAB011M12FM3T |
Wolfspeed |
324n C@ 15V 10.3n F@800V 14mΩ@ 100A, 15V 1.2KV 3.6V@35m A Mount |
10,745 pcs |
|
| IMT65R026M2HXUMA1-HXY |
HXY MOSFET |
ID:99A, VDSS:650V, RDON:26m R, VGS:-10/+25V, TYPE:NChannel, |
11,375 pcs |
|
| FL06250A-HXY |
HXY MOSFET |
ID:15A, VDSS:650V, RDON:260m R, VGS:-5~+16V, TYPE:NChannel, |
12,585 pcs |
|
| SCT2080KE-VB |
VBsemi |
TO247;NChannel, 1200V, 30A, RDS(ON)=80mΩ@VGS=18V, VGS= -10/+22V, Vth=2~4V;Suitable for demanding power electronics applications requiring high efficiency, high power density and high reliability;such ase VTOL, low-altitude logistics drone charging stations, induction cookers, smart ovens, solar PV invertersandenergy storage convertersetc.. |
26,892 pcs |
|
| IMZA75R016M1HXKSA1 |
Infineon |
81n C@ 18 V 319W(Tc) 2.869n F@500V 15mΩ@ 41.5A, 20V 89A 750V 5.6V@14.9m A 1NChannel Through-Hole Mount |
24,362 pcs |
|
| SIHG22N65E-GE3-HXY |
HXY MOSFET |
ID:25A, VDSS:800V, RDON:165m R, VGS:-8/+20V, TYPE:NChannel, |
27,021 pcs |
|
| NTPF190N65S3H |
HXY MOSFET |
ID:11A, VDSS:800V, RDON:165m R, VGS:-8/+20V, TYPE:NChannel, |
30,102 pcs |
|
| SCT4045DW7HRTL |
ROHM |
ROHM NChannel MOS, Vds=750 V, 31 A, TO-263-7LPackage, Through-Hole Mount |
14,546 pcs |
|
| NTH4L020N120SC1-VB |
VBsemi |
NChannel, 1200V, 100A, RDS(ON), 15mΩ@18V, -10/+22Vgs(±V);2~4Vth(V)Package:TO247Suitable for demanding applications requiring high efficiency, high power density, high temperature reliability and high frequency switching;such aselectric yachts, split-type flying cars, centralized independent energy storage stations, industrial robots, solar PV invertersandenergy storage convertersetc.. |
23,885 pcs |
|
| GC300N65F |
HXY MOSFET |
ID:9A, VDSS:650V, RDON:320m R, VGS:-8/+20V, TYPE:NChannel, |
33,780 pcs |
|
| UF3C120150B7S |
QORVO |
25.7n C@ 12 V 136W(Tc) 738p F@100V 180mΩ@ 5A, 12V 1.2KV 5.5V@10m A 1NChannel D2PAK-7 Surface Mount |
27,913 pcs |
|
| IMZA65R027M1H |
HXY MOSFET |
ID:120A, VDSS:650V, RDON:15m R, VGS:15V, TYPE:NChannel, |
41,485 pcs |
|
| CMS120N080B-HXY |
HXY MOSFET |
ID:30A, VDSS:1200V, RDON:75m R, VGS:-4/+18V, TYPE:NChannel, |
43,704 pcs |
|
| AIMZH120R080M1T-VB |
VBsemi |
TO247-4L;NChannel, 1200V, 30A, RDS(ON)=80mΩ@VGS=18V, VGS= -4/+22V, Vth=2~4V;Suitable for high efficiency, high power density and high frequency switching applications;such ashumanoid robot central high-voltage power system, low-altitude logistics drone charging stations, renewable energy generation and storage systemsetc.. |
40,534 pcs |
|
| IPA65R310CFDXKSA2-HXY |
HXY MOSFET |
ID:9A, VDSS:650V, RDON:320m R, VGS:-8/+20V, TYPE:NChannel, |
37,638 pcs |
|
| SIHH14N65EF-T1-GE3-HXY |
HXY MOSFET |
ID:14A, VDSS:650V, RDON:315m R, VGS:-8/+20V, TYPE:NChannel, |
47,953 pcs |
|