| HSCTW40N120G2VAG |
HXY MOSFET |
ID:32A, VDSS:1200V, RDON:75m R, VGS:15V, TYPE:NChannel, |
41,131 pcs |
|
| UF3C120080K4S-VB |
VBsemi |
TO247-4L;NChannel, 1200V, 30A, RDS(ON)=80mΩ@VGS=18V, VGS= -4/+22V, Vth=2~4V;Suitable for high efficiency, high power density and high frequency switching applications;such ashumanoid robot central high-voltage power system, low-altitude logistics drone charging stations, renewable energy generation and storage systemsetc.. |
37,694 pcs |
|
| NTHL025N065SC1 |
HXY MOSFET |
ID:120A, VDSS:650V, RDON:15m R, VGS:15V, TYPE:NChannel, |
34,625 pcs |
|
| IPP65R190CFDAAKSA1-HXY |
HXY MOSFET |
ID:20A, VDSS:800V, RDON:165m R, VGS:-10/+25V, TYPE:NChannel, |
19,739 pcs |
|
| IMBG120R022M2HXTMA1-VB |
VBsemi |
TO263;NChannel, 1200V;100A;RDS(ON)=15mΩ@VGS=18V, VGS=-10/+20V;Vth=2~4.5V;Suitable forhigh efficiency, high power densityandhigh reliabilityapplications;such assolar PV inverters, energy storage systems, EV on-board chargers, electric drive systems, smart connected sanitation vehiclesetc.. |
21,215 pcs |
|
| STE145N65M5-HXY |
HXY MOSFET |
ID:165A, VDSS:750V, RDON:11m R, VGS:-10/+25V, TYPE:NChannel, |
11,786 pcs |
|
| G2R1000MT17D-HXY |
HXY MOSFET |
ID:5A, VDSS:1700V, RDON:800m R, VGS:22V, TYPE:NChannel, |
24,203 pcs |
|
| C3M0065090D |
CREE |
100μA 30.4n C@ 15V 125KW 660p F@ 600V 900V 125W 1 78mΩ@ 15V 36A 900V 2.1V(Typ) 18V N-Channel Enhancement Mode TO-247 Through-Hole Mount 21.1mm(Height) |
29,594 pcs |
|
| SCT3022ALGC11-HXY |
HXY MOSFET |
ID:108A, VDSS:650V, RDON:20m R, VGS:-10/+25V, TYPE:NChannel, |
39,875 pcs |
|
| SCT4013DW7TL |
ROHM Semiconductor |
ROHM NChannel MOS, Vds=750 V, 98 A, TO-263-7LPackage, 7Pin |
45,511 pcs |
|
| SP25N120CTF |
SILIUP |
SiC FETs |
24,438 pcs |
|
| SCT3030KLGC11 |
ROHM |
NChannel MOS, Vds=1200 V, 72 A, TO-247NPackage, Through-Hole Mount, 3Pin |
17,037 pcs |
|
| STW75N65DM6-4-HXY |
HXY MOSFET |
ID:55A, VDSS:650V, RDON:45m R, VGS:-10/+25V, TYPE:NChannel, |
19,293 pcs |
|
| IMLT65R033M2HXTMA1 |
Infineon |
68A 650V 1NChannel Surface Mount 10.1mm(Length)*2.35mm(Height) |
13,063 pcs |
|
| SCT2280KE-VB |
VBsemi |
TO247;NChannel, 1200V, 30A, RDS(ON)=80mΩ@VGS=18V, VGS= -10/+22V, Vth=2~4V;Suitable for demanding power electronics applications requiring high efficiency, high power density and high reliability;such ase VTOL, low-altitude logistics drone charging stations, induction cookers, smart ovens, solar PV invertersandenergy storage convertersetc.. |
16,085 pcs |
|
| IMW120R045M1XKSA1-VB |
VBsemi |
TO247;NChannel, 1200V;60A;RDS(ON)=40mΩ@VGS=18V, VGS=-10~22V;Vth=2.5~4.5V;High voltage and current capability, Suitable forpower bus systems, such asbattery management systemsanddrive circuits. |
16,468 pcs |
|
| R6576ENZ4C13-HXY |
HXY MOSFET |
ID:70A, VDSS:650V, RDON:44m R, VGS:-8/+20V, TYPE:NChannel, |
19,286 pcs |
|
| IMZA120R007M1H |
Infineon Technologies/IR |
SiC FETs |
11,737 pcs |
|
| IMBF170R1K0M1XTMA1 |
HXY MOSFET |
ID:6A, VDSS:1700V, RDON:700m R, VGS:-4~+18V, TYPE:NChannel, |
30,428 pcs |
|
| HNVH4L045N065SC1 |
HXY MOSFET |
ID:97A, VDSS:650V, RDON:25m R, VGS:-5~+20V, TYPE:NChannel, |
47,672 pcs |
|
| NTH4L018N075SC1 |
ON Semiconductor |
140A 750V 1NChannel TO-247-4L Through-Hole Mount |
18,831 pcs |
|
| DMWSH120H43SM3-VB |
VBsemi |
TO247-4L;NChannel, 1200V, 65A, RDS(ON)=35mΩ@VGS=18V, VGS= -10/+22V, Vth=2~4V;Suitable for high power, high efficiency, high reliability applications;e.g.EV DC fast charging stations, AI smart vehicle AC compressor controller, AI motor predictive maintenance systemandhydro-powered energy storage systemsetc.. |
28,475 pcs |
|
| SSFU6511 |
HXY MOSFET |
ID:15A, VDSS:650V, RDON:260m R, VGS:-5~+16V, TYPE:NChannel, |
39,628 pcs |
|
| C3M0032120K |
HXY MOSFET |
ID:63A, VDSS:1200V, RDON:32m R, VGS:15V, TYPE:NChannel, |
15,447 pcs |
|
| ADP360120W3 |
STMicroelectronics |
STMicroelectronics Si C switching power supply, 6, 1200 V |
15,930 pcs |
|